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| INCHANGE Semiconductor isc Product Specification 2SA744 isc Silicon PNP Power Transistor DESCRIPTION *High Power Dissipation: PC= 70W(Max.)@TC=25 *Collector-Emitter Breakdown Voltage: V(BR)CEO= -80V(Min.) *Complement to Type 2SC1402 APPLICATIONS *Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -8 A IB B Base Current-Continuous Collector Power Dissipation @TC=25 Junction Temperature -3 A PC 70 W Tj 150 Tstg Storage Temperature -65~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification 2SA744 isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ;IB= 0 B -80 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A B -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -1.0 mA IEBO Emitter Cutoff Current VEB= -6V; IC= 0 -1.0 mA hFE DC Current Gain IC= -3A ; VCE= -4V 30 fT Current-Gain--Bandwidth Product IE= 0.5A ; VCE= -12V 15 MHz Switching times tr Rise Time IC= -3A ,RL= 4, VCC= -12V IB1= -0.2A; IB2= 0.1A 1.2 s tstg Storage Time 2.0 s tf Fall Time 0.55 s isc Websitewww.iscsemi.cn |
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